对于具有超高抗毁要求的网络, 如何通过增量规划配置方式部署资源以提升其业务的动态可恢复性, 提出了一种面向双链路故障的组合式网络增长规划算法(简称CA-DF策略), 建立了整数线性规划(ILP)模型, 并进行了仿真计算。仿真结果表明: CA-DF策略能在添加尽量少的网络资源情况下有效提升业务双链路故障下的动态恢复率。

以电化学阳极氧化法制备的多孔硅（PS）为衬底，用脉冲激光沉积方法分别在200和300℃下制备了ZnS薄膜，得到ZnS/PS复合体系。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、荧光分光光度计分别对ZnS/PS复合体系的晶体结构、形貌和光致发光（PL）特性进行了研究。XRD结果表明，制备的ZnS薄膜呈立方相晶体结构，沿β-ZnS（111）晶向择优取向生长，生长温度较高的样品的XRD衍射峰强度较大。SEM图像显示，生长温度较高的ZnS薄膜表面较致密平整。室温下的PL谱表明，沉积ZnS薄膜后，PS的发光峰发生蓝移。较高的生长温度下，ZnS的自激活发光强度较大，而PS的红光强度较低且峰位红移。根据三基色叠加的原理，ZnS的蓝绿光与PS的红光叠加在一起，ZnS/PS复合体系呈现出较强的白光发射，为固态白光发射器件的实现开辟了一条新的捷径。

针对倾斜转弯(BTT)导弹控制中的多变量强耦合问题，研究了一种适用于BTT导弹的反演算法，以实现自动驾驶仪的自适应解耦控制。根据 BTT导弹控制的基本特性，建立导弹的非线性控制模型，并将其转化为适合于反演设计的反馈块模型。在此模型上，基于反演的非线性控制系统综合设计方法，加入自适应神经网络逼近系统中存在的不确定性，利用Lyapunov稳定性定理推导了自适应调节律，设计了导弹控制律。通过仿真验证了该设计方法的有效性和可行性，该控制器能够实现控制解耦目的，且对指令信号跟踪效果良好。

ZnS thin films are deposited on porous silicon (PS) substrates with different porosities by pulsed laser deposition (PLD). The photoluminescence (PL) spectra of the samples are measured at room temperature. The results show that the PL intensity of PS after deposition of ZnS increases and is associated with a blue shift. With the increase of PS porosity, a green emission at about 550 nm is observed in the PL spectra of ZnS/PS systems, which may be ascribed to the defect-center luminescence of ZnS films. Junction current-voltage (I-V) characteristics were studied. The rectifying behavior of I-V characteristics indicates the formation of ZnS/PS heterojunctions, and the forward current is seen to increase when the PS porosity is increased.

用电化学法制备了高度有序的多孔阳极氧化铝模板, 选用CoSO4和CuSO4的混合溶液为电解液,用交流电化学沉积法在多孔阳极氧化铝的柱形微孔内制备铜钴合金纳米线有序阵列。分别用扫描电镜(SEM),X 射线衍射仪(XRD)对多孔氧化铝模板和纳米线阵列的微观形貌和结构进行分析。结果显示,制备的合金纳米线表面光滑、均匀,纳米线中的晶粒在长过程中有(111) 晶面的择优取向。用UV3101分光光度计测试了铜钴合金多孔铝复合结构的透射光谱及偏振光谱表明,合金纳米复合结构在可见及近红外波段具有良好的透射比和消光比; 铜钴合金纳米复合结构的确能够改善单一金属的特性, 比如在近红外光区, 其消光比(30 dB)优于铜纳米复合结构(17 dB)。

Porous anodic alumina (PAA) templates with branch structure are fabricated by the two-step anodic oxidation processes, and then the Y-branched Cu nanowires are synthesized in the templates using an alternating current (AC) deposition method. We observe the morphology image of the samples by scanning electron microscopy (SEM), and measure the transmission spectrum and the polarization spectrum of the samples by the spectrophotometer. The results show that PAA films with Y-branched Cu nanowires have better transmittance in the near infrared region. An extinction ratio of 15~18 dB and an insertion loss of 0.1~0.4 dB are obtained in this region. Therefore PAA with Y-branched Cu nanowires can be used as a near-infrared micropolarizer, and this kind of micropolarizer would have a promising future in the field of photoelectricity integration.

ZnS films were deposited by pulsed laser deposition (PLD) on porous silicon (PS) substrates formed by electrochemical anodization of p-type (100) silicon wafer. The photoluminescence (PL) spectra of ZnS/PS composites were measured at room temperature. Under different excitation wavelengths, the relative integrated intensities of the red light emission from PS layers and the blue-green emission from ZnS films had different values. After samples were annealed in vacuum at different temperatures (200, 300, and 400 Celsius degree) for 30 min respectively, a new green emission located at around 550 nm appeared in the PL spectra of all ZnS/PS samples, and all of the ZnS/PS composites had a broad PL band (450-700 nm) in the visible region, exhibiting intensively white light emission.

用阳极氧化的方法制备了阳极氧化铝膜，向其孔中分别镀入了铜和银，利用UV－3101型分光光度计测试了其透射光谱和偏振光谱，并研究了样品的偏振特性与入射角的关系．实验结果表明，这种含金属阳极氧化铝膜在近红外波段表现出良好的消光比，且入射角的大小对其消光比有着明显的影响．

Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.

ZnO is an n-type semiconductor having a hexagonal wurtzite structure. By X-ray diffraction (XRD) and scanning electron microscope (SEM), the influences of substrate temperature, the ratio of Ar to O2 and thermal temperature on ZnO crystal quality were studied. The results show that ZnO films deaposited at substrate temperature of 240 Celsius degrees and Ar:O2=1:3 have the best crystallization. UV photoluminescence is observed when ZnO films are excited by He-Cd laser at room temperature. Stress at boundary causes an intrinsic UV emission peak shift to the lower energy. Oxygen vacancy or zinc interstitial causes deep-level emission. With higher substrate temperature, the crystallization is improved and the stress and deep-level green emission are reduced.